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Proceedings Paper

Integrated IMP Ti and MOCVD TiN for 300-mm W barrier and liner for sub-0.18-um IC processing
Author(s): Anish Tolia; Marlon Menezes; Jason Li; Michael Jackson; Vikram Pavate; Nitin Khurana; Rod Mosely; Murali K. Narasimhan; Mei Chang; Fusen E. Chen
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Paper Abstract

The combination of IMP Ti and CVD TiN is well established for use as W-adhesion films for 200 mm wafers. The advantage of this unique PVD/CVD integrated solution provides the superior Ti bottom coverage by IMP Ti and conformal TiN coverage from MOCVD TiN. A 300 mm liner and barrier system with integrated IMP Ti, MOCVD TiN has also been developed on Endura mainframe. Scale-up to 300 mm poses several unique challenges to both CVD and PVD processes. Additionally, since 300 mm processing will likely be implemented at sub 0.18 micrometers mode, ultra-thin liners will be required for superior device performance. This paper discusses the process characterization of the 300 mm IMP Ti and MOCVD TiN for thin films (<200 A Ti and <100 A TiN). The Rs and Rs uniformity of 300 mm IMP Ti and CVD TiN were shown to be comparable with the results achieved for 200 mm. Laser acoustic wave spectrometry measurement of thickness and thickness uniformity of ultra-thin Ti (50 A) and TiN (50 A) will also be presented. Cross sectional TEM study shows superior Ti bottom coverage and conformal TiN coverage were also achieved with the integrated 300 mm IMP Ti/CVD TiN process. Process stability was demonstrated with 250-wafer run. The process results of 300 mm Ar sputtering preclean and degas will also be presented in the paper.

Paper Details

Date Published: 11 August 1999
PDF: 7 pages
Proc. SPIE 3883, Multilevel Interconnect Technology III, (11 August 1999); doi: 10.1117/12.360580
Show Author Affiliations
Anish Tolia, Applied Material Inc. (United States)
Marlon Menezes, Applied Material Inc. (United States)
Jason Li, Applied Material Inc. (United States)
Michael Jackson, Applied Material Inc. (United States)
Vikram Pavate, Applied Material Inc. (United States)
Nitin Khurana, Applied Material Inc. (United States)
Rod Mosely, Applied Material Inc. (United States)
Murali K. Narasimhan, Applied Material Inc. (United States)
Mei Chang, Applied Material Inc. (United States)
Fusen E. Chen, Applied Material Inc. (United States)

Published in SPIE Proceedings Vol. 3883:
Multilevel Interconnect Technology III
Mart Graef; Divyesh N. Patel, Editor(s)

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