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Proceedings Paper

Photoelectric characteristics of inhomogeneous MOS silicon-based structures
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Paper Abstract

The abnormal photoelectric properties of Si-MIS structures, such as a significant photo-emf signal in the state of enhancement and a drop of the local photo-emf in inversion, were investigated with integrate and local photoelectric measurements. It has been established that the reason for the significant photo-emf signal in enhancement and the related features of the photoelectric properties of the structure is the photosensitivity in the region away from the electrode associated with a nonuniform distribution of electrically active defects. It has been demonstrated that the nonuniformity in surface potential may result in a drop of the local photo-emf in inversion. A conclusion has been made that the redistribution of nonequilibrium carriers along the boundary must be taken into account in constructing equivalent circuits of actual MIS structures.

Paper Details

Date Published: 1 September 1999
PDF: 9 pages
Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360565
Show Author Affiliations
Aleksander V. Voitsekhovskii, Tomsk State Univ. (Russia) and Siberian Physico-Technical Institute (Russia)
Sergey N. Nesmelov, Tomsk State Univ. (Russia) and Siberian Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 3881:
Microelectronic Device Technology III
David Burnett; Toshiaki Tsuchiya, Editor(s)

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