Share Email Print

Proceedings Paper

Improvement of ultrathin gate oxide by a novel rapid thermal oxidation process with in-situ steam generation
Author(s): Mo-Chium Yu; Syun-Ming Jang; C. H. Diaz; C. H. Yu; S. C. Sun; M. S. Liang
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

This paper reports for the first time the growth of ultra- thin gate oxide by rapid thermal oxidation using in-situ generated steam (Wet RTO). Compared to conventional gate oxide grown by wet furnace and dry RTO, excellent oxide integrity of Wet RTO is demonstrated. Furthermore, the Wet RTO oxides nitrided by in-situ NO rapid thermal anneal also exhibits improved device transconductance, current drivability, and hot carrier reliability.

Paper Details

Date Published: 1 September 1999
PDF: 8 pages
Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360557
Show Author Affiliations
Mo-Chium Yu, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Syun-Ming Jang, Taiwan Semiconductor Manufacturing Co. (Taiwan)
C. H. Diaz, Taiwan Semiconductor Manufacturing Co. (Taiwan)
C. H. Yu, Taiwan Semiconductor Manufacturing Co. (Taiwan)
S. C. Sun, Taiwan Semiconductor Manufacturing Co. (Taiwan)
M. S. Liang, Taiwan Semiconductor Manufacturing Co. (Taiwan)

Published in SPIE Proceedings Vol. 3881:
Microelectronic Device Technology III
David Burnett; Toshiaki Tsuchiya, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?