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Proceedings Paper

New high-performance complementary bipolar technology featuring 45-GHz NPN and 20-GHz PNP devices
Author(s): Martin C. Wilson; Peter H. Osborne; Simon Thomas; Trevor Cook
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Paper Abstract

A new high performance silicon complementary bipolar technology is introduced. In addition a novel process 'enhancement' technique based on a local oxidation is described and demonstrated and NPN devices with cut-off frequencies up to 45GHz and PNP devices of 20GHz have been fabricate. We propose that the technique we have used will allow specific transistors within a circuit to be optimized, as required.

Paper Details

Date Published: 1 September 1999
PDF: 8 pages
Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360538
Show Author Affiliations
Martin C. Wilson, Mitel Semiconductor (United Kingdom)
Peter H. Osborne, Mitel Semiconductor (United Kingdom)
Simon Thomas, Mitel Semiconductor (United Kingdom)
Trevor Cook, Mitel Semiconductor (United Kingdom)

Published in SPIE Proceedings Vol. 3881:
Microelectronic Device Technology III
David Burnett; Toshiaki Tsuchiya, Editor(s)

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