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Proceedings Paper

Prototyping for high-aspect-ratio MEMS by high-energy x-ray lithography using boron-carbide-based masks
Author(s): Chantal G. Khan Malek; Steven Nguyen
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Paper Abstract

Low-cost and simple fabrication processes of masks for deep x-ray lithography are necessary for rapid prototyping of high-aspect-ratio microstructures by LIGA-like processes. Commercially available 4' diameter boron carbide substrates of 370 micrometers thickness were investigated as candidates for x-ray transparent mask blanks. High aspect ratio absorber structures were formed by gold electroplating after a x-ray lithographic step using an intermediate KaptonTM mask. The characteristics for boron carbide masks in terms of x- ray transparency and mask contrast were assessed by simulating exposures into polymethyl methacrylate (PMMA) resist using the wavelength shifter at CAMD and compared to other materials combinations, in particular silicon and graphite-based mask blanks. The boron carbide-based masks proved easy to fabricate and were replicated into 300/500 micrometers PMMA resist at intermediate x-ray energies (5 - 15 keV) on a bending magnet beamline of the CAMD ring operating at 1.5 GeV electron energy. These masks were designed for exposure at high photon energy into very thick resist or stacked exposures and will be tested using the CAMD superconductive wavelength shifter as a source of hard x- rays and associated new high energy x-ray lithography station, when available for use.

Paper Details

Date Published: 3 September 1999
PDF: 8 pages
Proc. SPIE 3875, Materials and Device Characterization in Micromachining II, (3 September 1999); doi: 10.1117/12.360477
Show Author Affiliations
Chantal G. Khan Malek, Louisiana State Univ. (France)
Steven Nguyen, Louisiana State Univ. (United States)

Published in SPIE Proceedings Vol. 3875:
Materials and Device Characterization in Micromachining II
Yuli Vladimirsky; Craig R. Friedrich, Editor(s)

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