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Proceedings Paper

Stencil mask fabrication for cell projection e-beam lithography with silicon wafer
Author(s): Jaeseung Choi; Seung-Ho Yi; Yongkyoo Choi; Hoon Huh; Jaejeong Kim
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Paper Abstract

Cell projection e-Beam lithography is one of the technology to increase the throughput capability, which is the demerit of conventional e-Beam lithography. In cell projection e-Beam lithography, Stencil mask fabrication is one of the most essential issue. Particularly, in fabricating stencil mask, both dry etching technique for forming aperture pattern and backside wet etching technique for forming silicon membrane are the most important technologies. With improvements in the techniques, Stencil mask that has low electric resistance compared with that made of SOI (Silicon-on-Insulator) wafer and vertical cross sectional profile is fabricated by the use of a (100) oriented silicon wafer. In addition, A device pattern of 0.13 micrometer which is sufficient for fabricating a 1G DRAM was delineated on wafer using this stencil mask.

Paper Details

Date Published: 25 August 1999
PDF: 9 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360244
Show Author Affiliations
Jaeseung Choi, LG Semicon Co., Ltd. (Japan)
Seung-Ho Yi, LG Semicon Co., Ltd. (South Korea)
Yongkyoo Choi, LG Semicon Co., Ltd. (South Korea)
Hoon Huh, LG Semicon Co., Ltd. (South Korea)
Jaejeong Kim, LG Semicon Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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