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Proceedings Paper

Pattern dependence of mask topography effect in alternating phase-shifting masks
Author(s): Tadao Yasuzato; Shinji Ishida; Hiroyoshi Tanabe
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Paper Abstract

We compared the topography effect of two types of alternating PSMs; single-trench type with side etching and dual-trench type. The side etching value and dual-trench depth were adjust to give same linewidth in 0 degree and 180 degree regions for 0.2 micrometer L/S pattern. Several test patterns having different width and length were formed on these alternating PSMs. These two PSMs were evaluated by using an x4, 0.6 NA, KrF exposure tool. For longer patterns (similar to L/S pattern), pattern size differences were very small; the mask topography effect was negligible. However, pattern size differences of shorter patterns (similar to window pattern) were large with both Alt PSMs. Therefore, optimization of the side etching value or the trench depth is required for each mask pattern.

Paper Details

Date Published: 25 August 1999
PDF: 8 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360218
Show Author Affiliations
Tadao Yasuzato, NEC Corp. (Japan)
Shinji Ishida, NEC Corp. (Japan)
Hiroyoshi Tanabe, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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