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Proceedings Paper

Improvement of post-exposure delay stability of chemically amplified positive resist
Author(s): Kohji Katoh; Kei Kasuya; Michiaki Hashimoto; Tadashi Arai; Toshio Sakamizu
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Paper Abstract

We have been developing a novolak-based chemically amplified positive resist for next generation photomask (below 0.18 micrometer) fabrication. This resist prevents footing profile by use of a hydrophilic polyphenol compound. We succeeded in improving PED and PCD stability by addition of an ion- dissociative compound. We obtained vertical resist profiles on a chromium-oxide (CrOx) substrate. With the resist, we could make a well defined 0.25 micrometer line-and-space patterns on a CrOx substrate at a dose of 4.0 uC/cm2. Under the ambient air (amines concentration: 4 ppb, humidity: 45%), the line width change was less than 10 nm when the delay time between EB exposure and post-exposure-baking was from 0 to 8 hours. Under the same condition, the line width change was less than 20 nm even when the post-coating delay (PCD) time was 7 days.

Paper Details

Date Published: 25 August 1999
PDF: 7 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360200
Show Author Affiliations
Kohji Katoh, Hitachi Chemical Co., Ltd. (Japan)
Kei Kasuya, Hitachi Chemical Co., Ltd. (Japan)
Michiaki Hashimoto, Hitachi Chemical Co., Ltd. (Japan)
Tadashi Arai, Hitachi, Ltd. (Japan)
Toshio Sakamizu, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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