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Proceedings Paper

Effects of the lateral carrier diffusion on modulation response of ridge-structured QW laser
Author(s): M. S. Torre; Ignacio Esquivias
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Paper Abstract

We analyze the influence of the lateral carrier diffusion on the modulation response including transport effects in ridge-waveguide multiple quantum well semiconductor lasers. It is found that the lateral carrier diffusion has a significant influence on the carrier spatial hole burning and the damping factor in the modulation response, but that the modulation bandwidth of ridge structure quantum well laser does no change.

Paper Details

Date Published: 6 July 1999
PDF: 7 pages
Proc. SPIE 3572, 3rd Iberoamerican Optics Meeting and 6th Latin American Meeting on Optics, Lasers, and Their Applications, (6 July 1999); doi: 10.1117/12.358410
Show Author Affiliations
M. S. Torre, Univ. Nacional del Ctr. de la Provincia de Buenos Aires (Argentina)
Ignacio Esquivias, Univ. Politecnica de Madrid (Spain)


Published in SPIE Proceedings Vol. 3572:
3rd Iberoamerican Optics Meeting and 6th Latin American Meeting on Optics, Lasers, and Their Applications
Angela Maria Guzman, Editor(s)

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