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Proceedings Paper

Recombination lifetimes in undoped and doped ZnCdSe laser structures
Author(s): John F. Donegan; Christopher Jordan; G. Laird; S. Taniguchi; T. Hino; E. Kato; N. Noguchi; Akira Ishibashi
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Paper Details

Date Published: 6 August 1999
PDF: 8 pages
Proc. SPIE 3625, Physics and Simulation of Optoelectronic Devices VII, (6 August 1999); doi: 10.1117/12.356902
Show Author Affiliations
John F. Donegan, Trinity College (Ireland)
Christopher Jordan, Trinity College (Ireland)
G. Laird, Trinity College (Ireland)
S. Taniguchi, Sony Corp. (Japan)
T. Hino, Sony Corp. (Japan)
E. Kato, Sony Corp. (Japan)
N. Noguchi, Sony Corp. (Japan)
Akira Ishibashi, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 3625:
Physics and Simulation of Optoelectronic Devices VII
Peter Blood; Akira Ishibashi; Marek Osinski, Editor(s)

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