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Proceedings Paper

Low-cost 320x240 uncooled IRFPA using a conventional silicon IC process
Author(s): Tomohiro Ishikawa; Masashi Ueno; Kazuyo Endo; Yoshiyuki Nakaki; Hisatoshi Hata; Takanori Sone; Masafumi Kimata; Tatsuo Ozeki
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Paper Abstract

A 320 X 240 uncooled IR focal plane array (IRFPA) with series PN junction diodes fabricated on a silicon-on- insulator (SOI) wafer has been developed. Resistive bolometers, pyroelectric detectors and thermopile detectors have been reported for large scale uncooled IRFPAs, while the detector developed uses the temperature dependence of forward-biased voltage of the diode. The diode has low 1/f noise because it is fabricated on the monocrystalline SOI film which has few defects. The diode is supported by buried silicon dioxide film of the SOI wafer, which becomes a part of a thermal isolated structure by using bulk silicon micromachining technique. The detector contains an absorbing membrane with a high fill factor of 90 percent to achieve high IR absorption, and the readout circuit of the FPA contains a gate modulation integrator to suppress the noise. Low cost IRFPA can be supplied because the whole structure of the FPA is fabricated on commercial SOI wafers using a conventional silicon IC process.

Paper Details

Date Published: 26 July 1999
PDF: 9 pages
Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); doi: 10.1117/12.354557
Show Author Affiliations
Tomohiro Ishikawa, Mitsubishi Electric Corp. (Japan)
Masashi Ueno, Mitsubishi Electric Corp. (Japan)
Kazuyo Endo, Mitsubishi Electric Corp. (Japan)
Yoshiyuki Nakaki, Mitsubishi Electric Corp. (Japan)
Hisatoshi Hata, Mitsubishi Electric Corp. (Japan)
Takanori Sone, Mitsubishi Electric Corp. (Japan)
Masafumi Kimata, Mitsubishi Electric Corp. (Japan)
Tatsuo Ozeki, Mitsubishi Electric Corp. (Japan)

Published in SPIE Proceedings Vol. 3698:
Infrared Technology and Applications XXV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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