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Proceedings Paper

Effect of carrier low-field mobility model on low-temperature drain current-voltage simulation of CMOS devices
Author(s): Wei-Lee Lu; Jenn-Gee Lo; Ting-Huan Chang
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Paper Abstract

Temperature dependent low-field mobility models in the commercial device simulation program are studied to check their effects on the drain characteristics. The results show that low-field mobility has not effect on threshold voltage, subthreshold swing, and the saturation voltage, but it is very important in determining the drain saturation current, transconductance, and the channel conductance of the CMOS devices under low temperature operation. Better understanding of the carrier mobility and the usage of it in the simulation program can help us in designing high performance circuits and process development for the low temperature applications.

Paper Details

Date Published: 26 July 1999
PDF: 6 pages
Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); doi: 10.1117/12.354548
Show Author Affiliations
Wei-Lee Lu, Chinese Naval Academy (Taiwan)
Jenn-Gee Lo, Chinese Naval Academy (Taiwan)
Ting-Huan Chang, Chinese Military Academy (Taiwan)

Published in SPIE Proceedings Vol. 3698:
Infrared Technology and Applications XXV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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