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Proceedings Paper

Extending the limits of i-line lithography for via layers and minimization of dense-iso bias
Author(s): Ramkumar Subramanian; Chris A. Spence; Luigi Capodieci; Thomas Werner; Ernesto Gallardo
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Paper Abstract

This paper describes the result of patterning contact holes on a TEOS substrate with 365 nm lithography using both binary and phase shift mask techniques. The target CD on the wafer was 0.34 micrometers and the minimum pitch was 0.63 micrometers . Results show significant improvement in depth-of-focus using the phase-shift mask. With the binary mask we obtained 0.6- micrometers DOF for both isolated and dense contact holes while with the phase-shift mask we obtained 1-micrometers DOF. Using the phase-shift mask we can also improve the linearity slightly for dense contacts and significantly for isolated contacts. The effect of pitch on contact size was also studied, showing that the intermediate pitch contacts print larger than the isolated or minimum pitch contacts. Using a mask- to-wafer bias of 60-80nm the largest bias between contacts of various sizes was 25 nm.

Paper Details

Date Published: 26 July 1999
PDF: 9 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354409
Show Author Affiliations
Ramkumar Subramanian, Advanced Micro Devices, Inc. (United States)
Chris A. Spence, Advanced Micro Devices, Inc. (United States)
Luigi Capodieci, Advanced Micro Devices, Inc. (United States)
Thomas Werner, Advanced Micro Devices, Inc. (United States)
Ernesto Gallardo, Advanced Micro Devices, Inc. (United States)

Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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