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Proceedings Paper

Lithographic implications for Cu/low-k integration
Author(s): Rebecca D. Mih; Nora Chen; Kenneth R. Jantzen; James T. Marsh; Steven Schneider
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Paper Abstract

Low dielectric constant materials in the back-end-of-line process are needed to reduce resistive-capacitive delays due to continually shrinking interconnect dimensions. Several organic dielectrics which have etch rates similar to photoresists, such as benzocyclobutene and diamond-like carbon, have been explored for compatibility with lithographic processes. In this paper we discuss integration issues from a lithographic perspective, including low-k materials selection and properties, integration sequences, use of hard masks and the effects on reflectivity, resist process compatibility and focus effects using an advanced DUV scanning system.

Paper Details

Date Published: 26 July 1999
PDF: 12 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354401
Show Author Affiliations
Rebecca D. Mih, IBM Microelectronics Div. (United States)
Nora Chen, IBM Microelectronics Div. (United States)
Kenneth R. Jantzen, IBM Microelectronics Div. (United States)
James T. Marsh, IBM Microelectronics Div. (United States)
Steven Schneider, IBM Microelectronics Div. (United States)

Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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