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Proceedings Paper

Impact of mask errors on full chip error budgets
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Paper Abstract

As lithography pushes to smaller and smaller features under the guidance of Moore's Law, patterned features smaller than the wavelength of light must be routinely manufactured. Lithographic yield in this domain is directly improved with the application of OPC to the pattern data. However, such corrections generally assume that the reticle can reproduce the benefits of OPC in some circumstances. In this paper, we present the characterization of the MEEF for contact holes. These are found to have significantly higher values for the MEEF than typically measured for isolated lines. Theoretical predictions are compared with experimental results. Good agreement is found at the center of the field only when the actual area of the contact hole as formed on the reticle is used as the metric of contact size. Across field variation, however, is found to be significant requires characterization for optimum yield to be achieved.

Paper Details

Date Published: 26 July 1999
PDF: 15 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999);
Show Author Affiliations
Franklin M. Schellenberg, Mentor Graphics (United States)
Victor V. Boksha, Mentor Graphics (United States)
Nicolas B. Cobb, Mentor Graphics (United States)
J. C. Lai, Worldwide Semiconductor Manufacturing Co. (Taiwan)
C. H. Chen, Worldwide Semiconductor Manufacturing Co. (Taiwan)
Chris A. Mack, FINLE Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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