Proceedings Paper
Illumination condition and mask bias for 0.15-um pattern with KrF and ArF lithography| Format | Member Price | Non-Member Price |
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Paper Abstract
In this paper the optimization of illumination condition and mask bias in semiconductor lithography is reported, in the case of using half-tone mask (HTM) and off-axis illumination (OAI). Its results are to control the line width and to enlarge the common process margin for both isolated and dense 0.18micrometers -0.15micrometers pattern with KrF and ArF lithography. It found that for 0.18micrometers pattern KrF needs every resolution enhancement technology, for example, HTM, OAI and iso/dense optical proximity correction. For 0.15micrometers pattern KrF needs more than 0.65NA additionally. On the other hand ArF needs less than 0.55NA.
Paper Details
Date Published: 26 July 1999
PDF: 12 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354327
Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)
PDF: 12 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354327
Show Author Affiliations
Hiroki Tabuchi, SHARP Corp. (Japan)
Y. Shichijo, SHARP Corp. (Japan)
N. Oka, SHARP Corp. (Japan)
Y. Shichijo, SHARP Corp. (Japan)
N. Oka, SHARP Corp. (Japan)
N. Takenaka, SHARP Corp. (Japan)
K. Iguchi, SHARP Corp. (Japan)
K. Iguchi, SHARP Corp. (Japan)
Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)
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