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Proceedings Paper

Comparison study for sub-150-nm DUV lithography between high-NA KrF and ArF lithography
Author(s): Donggyu Yim; Ki-Sung Kwon; Young-Mog Ham; Ki-Ho Baik
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Paper Abstract

Critical issues for 150nm DUV lithography using 0.70 NA KrF and 0.60 NA ArF had been investigated. Aberration, coherence variation, mask error effect, and process margin for each case had been analyzed. Current projection lens and illumination optics are getting better and better. However, for 150nm lithography using high NA scanner, a large portion of beam should be traced on the outside of lens pupil and traced on the resist surface with a large incident angle. In such a case, lens aberration effect was observed on field edge, even though strehl ratio of projection lens and coherence variation on field edge had been improved. These effects had been investigated. One other critical issue in high NA scanner is depth of focus. The common depth of focus between dense and isolated patterns in real process using high NA scanner is mainly affected by photoresist thickness. That issue had been also investigated. Another important issue for 150nm DUV lithography is mask error effect. In the case of same design rule, lower (lambda) /NA lens is more favored than higher (lambda) /NA. Mask error issue in high NA KrF and ArF was also analyzed. Total comparisons between high NA KrF and 0.60 NA ArF have been discussed.

Paper Details

Date Published: 26 July 1999
PDF: 12 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354326
Show Author Affiliations
Donggyu Yim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ki-Sung Kwon, Hyundai Electronics Industries Co.,Ltd. (South Korea)
Young-Mog Ham, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ki-Ho Baik, Hyundai Electronics Industries Co., Ltd. (United States)

Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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