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Proceedings Paper

Lattice strain in excimer-laser-crystallized poly-Si thin films
Author(s): Hiroshi Okumura; Akio Tanikawa; Kenji Sera; Fujio Okumura
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Paper Abstract

The lattice strain in excimer laser crystallized polycrystalline Si thin films reflects the grain growth induced by the laser irradiation. In this report, the measurement of the lattice strain is made by using the energy-dispersive grazing-incidence x-ray diffraction with synchrotron radiation. The excimer laser crystallized poly- Si thin films show tensile lattice strain in the directions parallel to the substrate surface. The strain increases from 2.2 X 10-3 to 5.0 X 10-3 when the grain size increase from 40 to 200 nm. The strain is anisotropic between the strain and the strain in the layer near the substrate interface when the grain size is small. Carrier mobility in a thin film transistor tends to increase when the strain increases and the anisotropy decreases.

Paper Details

Date Published: 15 July 1999
PDF: 8 pages
Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); doi: 10.1117/12.352694
Show Author Affiliations
Hiroshi Okumura, NEC Corp. (Japan)
Akio Tanikawa, NEC Corp. (Japan)
Kenji Sera, NEC Corp. (Japan)
Fujio Okumura, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 3618:
Laser Applications in Microelectronic and Optoelectronic Manufacturing IV
Jan J. Dubowski; Henry Helvajian; Ernst-Wolfgang Kreutz; Koji Sugioka, Editor(s)

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