Share Email Print

Proceedings Paper

Correlation between power density fluctuation and grain size distribution of laser-annealed polycrystalline silicon
Author(s): Kenkichi Suzuki; Masakazu Saitou; Michiko Takahashi; Nobuaki Hayashi; Takao Terabayashi
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The grain size of polycrystalline silicon by the excimer laser annealing (ELA) is primarily determined by the fluence, and the distribution uniformity is strongly influenced by the intensity fluctuation. Instead of the conventional CCD profile, a resist film is used to monitor the light intensity distributions over whole illumination area in submicron resolution. The high resolution measurements show speckle patterns with 0.1-0.15 spacing with maximum 10mJ/cm2 variation. The fluctuation does not influence the grain size variation in the lateral growth region over 1-2 micrometers area, however, the undulation of intensity about 10mJ/cm2 over 10 micrometers distance produces an appreciable changes in the grain sizes. Such a local temperature distribution corresponds to the envelop obtained by averaging small area, and is maintained during crystallization process.

Paper Details

Date Published: 15 July 1999
PDF: 10 pages
Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); doi: 10.1117/12.352693
Show Author Affiliations
Kenkichi Suzuki, Hitachi, Ltd. (Japan)
Masakazu Saitou, Hitachi, Ltd. (Japan)
Michiko Takahashi, Hitachi, Ltd. (Japan)
Nobuaki Hayashi, Hitachi, Ltd. (Japan)
Takao Terabayashi, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 3618:
Laser Applications in Microelectronic and Optoelectronic Manufacturing IV
Jan J. Dubowski; Henry Helvajian; Ernst-Wolfgang Kreutz; Koji Sugioka, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?