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Proceedings Paper

New silica glass for 157-nm lithography
Author(s): Yoshiaki Ikuta; Shinya Kikugawa; Akio Masui; Noriaki Shimodaira; Shuhei Yoshizawa; Masahiro Hirano
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Paper Abstract

Projection photolithography at 157 nm is now under research as a possible extension of current 248 nm and planned 193 nm technologies. However, the conventional silica glass used for 248 nm and 193 nm lithography cannot be applied for 157 nm lithography because of its low transmittance. In order to develop the modified silica glass for 157 nm lithography, the transmittance in the vacuum-UV region and the optical properties induced by vacuum-UV irradiation were investigated. The OH group and the ODC in the silica glass markedly affect the initial transmittance at 157 nm and the former also affects the resistance to vacuum -UV irradiation. The hydrogen bonded OH group was observed after vacuum-UV irradiation. From these results, the new silica glass 'AQF' for 157 nm lithography has been successfully developed with a high internal transmittance at 157 nm and a excellent resistance to F2 laser.

Paper Details

Date Published: 25 June 1999
PDF: 7 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351160
Show Author Affiliations
Yoshiaki Ikuta, Asahi Glass Co., Ltd. (Japan)
Shinya Kikugawa, Asahi Glass Co., Ltd. (Japan)
Akio Masui, Asahi Glass Co., Ltd. (Japan)
Noriaki Shimodaira, Asahi Glass Co., Ltd. (Japan)
Shuhei Yoshizawa, Asahi Glass Co., Ltd. (Japan)
Masahiro Hirano, Asahi Glass Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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