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Proceedings Paper

Development of a technique for rapid at-wavelength inspection of EUV mask blanks
Author(s): Steven J. Spector; Ping Luo; Anthony E. Novembre; Leonidas E. Ocola; Donald L. White; Donald M. Tennant; Obert R. Wood II
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Paper Abstract

We have dramatically increased the sensitivity of a technique for the rapid inspection of EUV multilayer-coated mask blanks. In this technique an EUV sensitive resist is applied directly to a mask blank which is then flood exposed with EUV light and partially developed. Reflectivity defects in the mask blank results in mounds in a partially developed positive resists that appear as high contrast objects in a standard Nomarski microscope. The use of a higher contrast resist is shown experimentally to result in the creation of dramatically taller mounds. A simple model for the exposure and development of the resists has been developed and the predictions of the model compare well with the experimental results.

Paper Details

Date Published: 25 June 1999
PDF: 9 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351134
Show Author Affiliations
Steven J. Spector, Lucent Technologies (United States)
Ping Luo, Matrix Integrated Systems Inc. (United States)
Anthony E. Novembre, Lucent Technologies/Bell Labs. (United States)
Leonidas E. Ocola, Lucent Technologies/Bell Labs. (United States)
Donald L. White, Lucent Technologies/Bell Labs. (United States)
Donald M. Tennant, Lucent Technologies/Bell Labs. (United States)
Obert R. Wood II, Lucent Technologies/Bell Labs. (United States)

Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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