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Proceedings Paper

MOSCASEL: a total solution to electron-beam lithography simulation
Author(s): Zheng Cui
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Paper Abstract

Electron beam lithography is favored as one of the options for microlithography of ICs at below 150 nm resolution regime. To assist lithography process development, computer simulations are widely used. Current simulation packages for electron beam lithography are only able to offer simple solutions. A new simulation package MOCASEL is presented in this paper which offers a total solution to many issues encountered in current and future application of e-beam lithography. A number of modules have been built into the package, which can simulate not only 2D and 3D resist profiles on a flat substrate but on a topographical substrate. Proximity effect correction can be simulated to check its effectiveness. Signals from alignment mark detection can be calculated. Heating effect due to e-beam irradiation of resist can be estimated. All these modules are explained in the paper with simulation examples in the form of 2D and 3D resists profiles.

Paper Details

Date Published: 25 June 1999
PDF: 12 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351122
Show Author Affiliations
Zheng Cui, Rutherford Appleton Lab. (United Kingdom)

Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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