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Proceedings Paper

Development of a 0.1 micron linewidth fabrication process for x-ray lithography with a laser plasma source
Author(s): Romuald Bobkowski; Robert Fedosejevs; James N. Broughton
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Paper Abstract

A process has been developed for the purpose of fabricating 0.1 micron linewidth interdigital electrode patterns based on proximity x-ray lithography using a laser-plasma source. Such patterns are required in the manufacture of surface acoustic wave devices. The x-ray lithography was carried out using emission form a Cu plasma produced by a 15Hz, 248nm KrF excimer laser. A temporally multiplexed 50ps duration seed pulse was used to extract the KrF laser energy producing a train of several 50ps pulses spaced approximately 2ns apart within each output pulse. Each short pulse within the train gave the high focal spot intensity required to achieve high efficiency emission of keV x-rays. The first stage of the overall process involves the fabrication of x-ray mask patterns on 1 micron thick Si3N4 membranes using 3-beam lithography followed by gold electroplating. The second stage involves x-ray exposure of a chemically amplified resist through the mask patterns to produce interdigital electrode patterns with 0.1 micron linewidth. Helium background gas and thin polycarbonate/aluminum filters are employed to prevent debris particles from the laser-plasma source form reaching the exposed sample. A computer control system fires the laser and monitors the x-ray flux from the laser-plasma source to insure the desired x-ray exposure is achieved at the resist. In order to reduce diffusion effects in the chemically amplified resist during the post exposure bake the temperature had to be reduced from that normally used. Good reproduction of 0.1 micron linewidth patterns into the x-ray resist was obtained once the exposure parameters and post exposure bake were optimized. A compact exposure station using flowing helium at atmospheric pressure has also been developed for the process, alleviating the need for a vacuum chamber. The details of the overall process and the compact exposure station will be presented.

Paper Details

Date Published: 25 June 1999
PDF: 8 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351111
Show Author Affiliations
Romuald Bobkowski, Univ. of Alberta (Canada)
Robert Fedosejevs, Univ. of Alberta (Canada)
James N. Broughton, Alberta Microelectronics Corp. (Canada)

Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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