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Proceedings Paper

Mask topography simulation for EUV lithography
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Paper Abstract

This paper introduces a methodology for rigorous computation of electric fields in the neighborhood of reflective masks employed in EUV lithography. Specifically, the media used in this application place stringent requirements on the spatial and temporal grids in order to achieve a stable and accurate Finite-Difference, Time-Domain calculation. An analytical expression for the electric field reflectivity off the multilayer is harnessed to define effective media that can decrease run times by as much as an order of magnitude. This framework is then used to analyze the effect of the absorber thickness on image linewidth and quality.

Paper Details

Date Published: 25 June 1999
PDF: 15 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351100
Show Author Affiliations
Ronald L. Gordon, FINLE Technologies, Inc. (United States)
Chris A. Mack, FINLE Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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