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Proceedings Paper

EUV interferometric lithography for resist characterization
Author(s): Harun H. Solak; Dongxing He; Wai-Kin Li; Franco Cerrina; B. H. Sohn; Xiao Min Yang; Paul F. Nealey
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Paper Abstract

We report printing of sub-20nm line/space patterns by Interferometric Lithography technique with EUV light for the first time. EUV lithography is pursued as one of the candidate next generation lithography technologies. New photoresist materials need to be developed and characterized for this spectral region mainly because of high absorption coefficients of materials. EUV interferometric lithography is a useful tool for testing of materials with high resolution features especially because EUV lithographic systems are still under early development phases. It provides a cost effective and simple way of achieving this without the need for complicated imaging system. We employed a Lloyd's Mirror Interferometry scheme with monochromatized undulator light from an electron storage ring. The technique is described and results showing the printed patterns are presented. Potential uses of the method for lithography research are discussed.

Paper Details

Date Published: 25 June 1999
PDF: 5 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351099
Show Author Affiliations
Harun H. Solak, Univ. of Wisconsin/Madison (United States)
Dongxing He, Univ. of Wisconsin/Madison (United States)
Wai-Kin Li, Univ. of Wisconsin/Madison (United States)
Franco Cerrina, Univ. of Wisconsin/Madison (United States)
B. H. Sohn, Univ. of Wisconsin/Madison (United States)
Xiao Min Yang, Univ. of Wisconsin/Madison (United States)
Paul F. Nealey, Univ. of Wisconsin/Madison (United States)

Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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