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Proceedings Paper

EUV lithography research program at ASET
Author(s): Shinji Okazaki
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Paper Abstract

EUV lithography is the most promising candidate for delineating patterns below 70 nm. Last year, the Japanese government provided a supplemental budget to the research program on EUV lithography. The overall Japanese plan for the development of EUV lithography has 3 phases. The first is the ASET program, which concerns the development of basic technologies for EUV lithography. The second phase is the development of an EUV lithography system. And the final one is the development of technologies that will make EUV lithography practical. Current plans call for each phase to take 3 years, for a total of 9 years for the whole program. Ten semiconductor manufacturers and two equipment suppliers participate in the first-phase ASET EUV program described in this paper. In this program, the basic technologies of EUV lithography will be developed, which include multilayer mirror mask technology, resist materials and process technology for top surface imagin, and metrology for aspherical optics. This program will be carried out at the Atsugi research center and two branch laboratories at Himeji and Sagamihara.

Paper Details

Date Published: 25 June 1999
PDF: 8 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351095
Show Author Affiliations
Shinji Okazaki, Association of Super-Advanced Electronics Technologies (Japan)

Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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