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Proceedings Paper

Nanometer patterning using ma-N 2400 series DUV negative photoresist and electron beam lithography
Author(s): Anya Voigt; Harald Elsner; H. G. Meyer; Gabi Gruetzner
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Paper Abstract

Results of electron beam exposure of a DUV sensitive negative tone photoresists composed of a novolak/aromatic bisazide system are presented. Contents of the components of the resist solution were varied to cover a wide range of film thicknesses and to attain optimal performance of the resist. Dense patterns with dimensions of 100 nm and below of the resists patterned by electron beam exposure demonstrate its excellent resolution capability and the possibility to generate patterns with steep side walls and high aspect ratios.

Paper Details

Date Published: 25 June 1999
PDF: 7 pages
Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); doi: 10.1117/12.351078
Show Author Affiliations
Anya Voigt, micro resist technology GmbH (Germany)
Harald Elsner, Institute for Physical High Technology (Germany)
H. G. Meyer, Institute for Physical High Technology (Germany)
Gabi Gruetzner, micro resist technology GmbH (Germany)

Published in SPIE Proceedings Vol. 3676:
Emerging Lithographic Technologies III
Yuli Vladimirsky, Editor(s)

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