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Proceedings Paper

Ultrashort transient pulse propagation effect in semiconductor waveguides under a nonlinear dispersion regime
Author(s): Pranay K. Sen; Abhay Kumar; Pratima Sen
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Paper Abstract

Using semiclassical time dependent perturbation treatment, the coherence radiation-semiconductor interaction under ultrashort pulsed near band-gap resonant excitation regime has been analytically investigated in a narrow direct-gap semiconductor waveguide structure. The role of excitonic effect is incorporated to study transient pulse propagation effects in GAs/AlGaAs waveguide duly irradiated by a 100 fs Ti:Sapphire laser. Nonlinear Schroedinger equation is employed to examine the role of group velocity dispersion and nonlinear optical effect on the transmission characteristics of the pulse at various excitation intensities and waveguide lengths. The results suggest the occurrence of pulse break-up and pulse narrowing during propagation of the pulse through the GaAs/AlGaAs waveguide.

Paper Details

Date Published: 23 June 1999
PDF: 7 pages
Proc. SPIE 3609, Optical Pulse and Beam Propagation, (23 June 1999); doi: 10.1117/12.351069
Show Author Affiliations
Pranay K. Sen, Shri GS Institute of Technology and Science (India)
Abhay Kumar, Devi Ahilya Vishwa Vidyalya (India)
Pratima Sen, Shri GS Institute of Technology and Science (India)

Published in SPIE Proceedings Vol. 3609:
Optical Pulse and Beam Propagation
Yehuda B. Band, Editor(s)

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