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Proceedings Paper

Ultimate performance of new infrared HgCdTe focal plane arrays
Author(s): V. V. Osipov; Vladimir P. Ponomarenko; A. Yu. Selyakov
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Paper Abstract

We theoretically study physical processes in new promising hybrid IR FPAs based on HgCdTe p-n junctions and analyze them ultimate performance for 3 - 5 micrometers and 8 - 10 micrometers spectral ranges. Architecture of these FPAs are much simpler than that of existing FPAs: IR-sensitive HgCdTe p-n junctions are used as switches themselves, and capacitors used as strong elements occupy all the area under each p-n junction. These capacitors can be produced on the base of dielectrics with relatively high permittivity (of TiO2, type or integrated ferroelectrics). In contrast to CCD and CID, the proposed FPA does not use charge transfer between electrodes separated in space. We formulate requirements to the parameters of photosensitive elements and storage capacitors to reach the largest integration time and threshold characteristics close to the theoretical limits. It is shown that in principle the considered FPAs have unique parameters and 1/f noise of amplifiers can be suppressed in them. FPA for 3 - 5 micrometers spectral range with p-n junction of 20 X 20 micrometers 2 area can operate in BLIP mode at background temperature 300 K;its photosignal integration time equal to the persistence of human eye and format can reach 1024 X 1024 pixels. For 8 - 10 micrometers range these parameters are 300 microsecond(s) and 256 X 256 pixels, respectively, when TiO2 storage capacitors are used.

Paper Details

Date Published: 10 June 1999
PDF: 16 pages
Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); doi: 10.1117/12.350903
Show Author Affiliations
V. V. Osipov, ORION Research, Development, and Production Ctr. (Russia)
Vladimir P. Ponomarenko, ORION Research, Development, and Production Ctr. (Russia)
A. Yu. Selyakov, ORION Research, Development, and Production Ctr. (Russia)

Published in SPIE Proceedings Vol. 3819:
International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev, Editor(s)

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