Proceedings Paper
Ultraviolet photodetectors based on wide-bandgap A3B5 compounds| Format | Member Price | Non-Member Price |
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Paper Abstract
We report on the fabrication and characterization of ultraviolet photodetectors with Schottky barrier based on semiconductor GaP, GaPxAs1-x and GaAs. As row materials are used n-n+-type epitaxial structures. Base parameters of the photodetectors are demonstrated.
Paper Details
Date Published: 10 June 1999
PDF: 4 pages
Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); doi: 10.1117/12.350883
Published in SPIE Proceedings Vol. 3819:
International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev, Editor(s)
PDF: 4 pages
Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); doi: 10.1117/12.350883
Show Author Affiliations
D. Anisimova, ORION Research, Development, and Production Ctr. (Russia)
Vitaly I. Stafeev, ORION Research, Development, and Production Ctr. (Russia)
Published in SPIE Proceedings Vol. 3819:
International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev, Editor(s)
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