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Proceedings Paper

Role of LV-SEM reticle CD measurements on DUV lithography
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Paper Abstract

In this work, we investigate the role of low voltage reticle CD-SEM measurements on DUV lithography. We compare reticle measurements carried out on tow different CD-SEMs and optical measurements as typically carried out at mask shops. CD-SEM measurements using the 50 percent derivative algorithm on the KLA 8100ER CD-SEM and the 50 percent threshold algorithm on the Hitachi 6100 CD-SEM show good correlation with the optical measurements. As examples for the importance of LV CD-SEM reticle measurements we show the influence of proximity effects during reticle printing on CD variations on reticle level by comparing the values obtained on the reticle and on the wafer. Finally, we determine mask error factors. The MEF has to be taken into account to compare wafer and reticle CDs. We show that it does not change for wafer measurement after lithography and after poly-etch. The use of different metrology tools or electrical linewidth measurements does not influence the MEF.

Paper Details

Date Published: 14 June 1999
PDF: 8 pages
Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); doi: 10.1117/12.350870
Show Author Affiliations
Thomas Marschner, IMEC (Germany)
Ivan K.A. Pollentier, IMEC (Belgium)
Goedele Potoms, IMEC (Belgium)
Rik M. Jonckheere, IMEC (Belgium)
Kurt G. Ronse, IMEC (Belgium)
Marco Polli, KLA-Tencor Corp. (France)

Published in SPIE Proceedings Vol. 3677:
Metrology, Inspection, and Process Control for Microlithography XIII
Bhanwar Singh, Editor(s)

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