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Proceedings Paper

CD-SEM precision: improved procedure and analysis
Author(s): Mina Menaker
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Paper Abstract

Accurate precision assessment becomes increasingly important as we proceed along the SIA road map, in to more advanced processes and smaller critical dimensions. Accurate precision is necessary in order to determine the P/T ratio which is used to decide whether a specific CD-SEM is valid for controlling a specific process. The customer's needs, as been presented by the SEMATECH Advanced Metrology Advisory Group, are to receive a detailed precision report, in the form of a full repeatability and reproducibility (RR) analysis. The 3 sigma single tool RR, of an in-line SEM, are determined in the same operational modes as used in production, and should include the effects of time and process variants on the SEM performance. We hereby present an RR procedure by a modulate approach which enables the user extending the evaluation according to her/his needs. It includes direct assessment of repeatability, reproducibility and stability analysis. It also allows for a study of wafer non homogeneity, induced process variation and a measured feature type effect on precision. The procedure is based on the standard ISO RR procedure, and includes a modification for a correct compensation for bias, or so called measurement turned. A close examination of the repeatability and reproducibility variations, provides insight to the possible sources of those variations, such as S/N ratio, SEM autofocus mechanism, automation etc. For example, poor wafer alignment might not effect the repeatability, but severally reduce reproducibility. Therefore the analysis is a key to better understanding and improving of CD-SEM performance, on production layers. The procedure is fully implemented on an automated CD-SEM, providing on line precision assessment. RR < 1 nm has been demonstrated on well defined resist and etched structures. Examples of the automatic analysis results, using the new procedure are presented.

Paper Details

Date Published: 14 June 1999
PDF: 8 pages
Proc. SPIE 3677, Metrology, Inspection, and Process Control for Microlithography XIII, (14 June 1999); doi: 10.1117/12.350816
Show Author Affiliations
Mina Menaker, Applied Materials (Israel)

Published in SPIE Proceedings Vol. 3677:
Metrology, Inspection, and Process Control for Microlithography XIII
Bhanwar Singh, Editor(s)

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