Share Email Print

Proceedings Paper

CVD photoresist performance for 248-nm lithography
Author(s): Cedric Monget; Olivier P. Joubert; Timothy W. Weidman; Olivier Toublan; Jean-Pierre Panabiere; Andre P. Weill
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Some of the major limitations of top surface imaging schemes are now well documented: critical dimension (CD) control across the wafer can be a serious issue as well as line edge roughness (LER). A primary focus of our work has been to investigate the performance of the 248 nm bi-level negative tone approach of the CVD photoresist process based on the plasma polymerization of methylsilane. In this paper, CD control data within a field and across the wafer are presented. CD control is shown to be very strongly dependent on the uniformity of the development step. The best results are obtained when using straight chlorine for the plasma etch development step.

Paper Details

Date Published: 11 June 1999
PDF: 11 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350265
Show Author Affiliations
Cedric Monget, France Telecom CNET-CNS (France)
Olivier P. Joubert, France Telecom CNET-CNS and Lab. des Technologies de la Microelectronique (France)
Timothy W. Weidman, Applied Materials, Inc. (United States)
Olivier Toublan, France Telecom CNET-CNS (France)
Jean-Pierre Panabiere, France Telecom CNET-CNS (France)
Andre P. Weill, France Telecom CNET-CNS (France)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?