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Proceedings Paper

Effect of developer normality on the resist dissolution rate and performance
Author(s): Medhat A. Toukhy; Brian Maxwell; Somboun Chanthalyma
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Paper Abstract

Process simulation is necessary to investigate possible enhancements of some selective resist performance properties as a result of changes in the developer concentration. Accurate dissolution parameters are needed for different developer normalities to simulate their effect on the resist dissolution rates. Only qualitative similarities are observed in the dissolution behavior of similar chemistry based resist as a function of developer normalities. Quantitative differences in the dissolution rates and curve shapes are detected between resist based on different chemistries. No single universal dissolution model capable of describing the behavior of all different resists was found. However, individual resist dissolution/developer concentration models can be constructed.

Paper Details

Date Published: 11 June 1999
PDF: 6 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350259
Show Author Affiliations
Medhat A. Toukhy, Arch Chemicals, Inc. (United States)
Brian Maxwell, Arch Chemicals, Inc. (United States)
Somboun Chanthalyma, Arch Chemicals, Inc. (United States)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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