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Proceedings Paper

Design and development of high-performance 193-nm positive resist based on functionalized poly(cyclicolefins)
Author(s): Pushkara Rao Varanasi; J. Maniscalco; Ann Marie Mewherter; Margaret C. Lawson; George M. Jordhamo; Robert D. Allen; Juliann Opitz; Hiroshi Ito; Thomas I. Wallow; Donald C. Hofer; Leah Langsdorf; Saikumar Jayaraman; Richard Vicari
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Paper Abstract

One of the major factors that seem to limit the development of practically useful 193nm resist materials has been their low reactive-ion-etch (RIE) resistance. In this paper, we have shown convincingly that the RIE stability of poly(cyclicolefins) is superior to that of the alternating copolymers such as poly(norbornene-anhydride), and poly(acrylates). We have also shown that a high performance 193nm resist can be developed from functionalized poly(norbornenes) using appropriate formulation and process optimizations.

Paper Details

Date Published: 11 June 1999
PDF: 13 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350251
Show Author Affiliations
Pushkara Rao Varanasi, IBM Microelectronics Div. (United States)
J. Maniscalco, IBM Microelectronics Div. (United States)
Ann Marie Mewherter, IBM Microelectronics Div. (United States)
Margaret C. Lawson, IBM Microelectronics Div. (United States)
George M. Jordhamo, IBM Microelectronics Div. (United States)
Robert D. Allen, IBM Almaden Research Ctr. (United States)
Juliann Opitz, IBM Almaden Research Ctr. (United States)
Hiroshi Ito, IBM Almaden Research Ctr. (United States)
Thomas I. Wallow, IBM Almaden Research Ctr. (United States)
Donald C. Hofer, IBM Almaden Research Ctr. (United States)
Leah Langsdorf, BFGoodrich (United States)
Saikumar Jayaraman, BFGoodrich (United States)
Richard Vicari, BFGoodrich (United States)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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