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Proceedings Paper

Chemically amplified resists using the absorption band shift method in conjunction with alicyclic compounds for ArF excimer laser lithography
Author(s): Takeshi Okino; Koji Asakawa; Naomi Shida; Tohru Ushirogouchi
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Paper Abstract

The resist comprising naphthalene rings instead of benzene rings was developed for ArF excimer laser lithography. Naphthalene shows outstanding dry etch resistance, stronger adhesion to silicon surface and low hydrophobicity compared with most alicyclic compounds. Di-tert-butyl 2-[(1- adamanthyl) carbonylmethyl] (ADTB) was developed as an additive to improve the characteristics of development of base polymer. Although ADTB has tert-butyl protective groups, the decomposition temperature is low compared with that of polymer which has a tert-butyl protective group. Moreover, the dry etch resistance of the resist becomes greater as ADTB content increases. 0.133 micrometers L/S patterns were fabricated using Nikon's ArF prototype exposure system. Next, in order to improve the adhesion of the resist having the alicyclic frame, introduction of naphthalene in to the resist was attempted. The new resists which has naphthalene frame showed stronger adhesion and 0.15 micrometers L/S patterns were fabricated using the ArF exposure system with the standard developer.

Paper Details

Date Published: 11 June 1999
PDF: 9 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350242
Show Author Affiliations
Takeshi Okino, Toshiba Corp. (Japan)
Koji Asakawa, Toshiba Corp. (Japan)
Naomi Shida, Toshiba Corp. (Japan)
Tohru Ushirogouchi, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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