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Proceedings Paper

Comparison of measured sidewall roughness for positive-tone chemically amplified resists exposed by x-ray lithography
Author(s): Geoffrey W. Reynolds; James Welch Taylor
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Paper Abstract

As critical dimensions for resist features shrink, resist roughness on the sidewall may contribute relatively more to the correspondingly smaller CD error budget. Thus, some photoresists may be more suitable than others for smaller dimensions. This paper compares and contrasts the sidewall roughness values measured by atomic force microscopy of two positive-tones, chemically amplified resists used in X-ray lithography.

Paper Details

Date Published: 11 June 1999
PDF: 9 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350240
Show Author Affiliations
Geoffrey W. Reynolds, Univ. of Wisconsin/Madison (United States)
James Welch Taylor, Univ. of Wisconsin/Madison (United States)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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