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Proceedings Paper

Chemically amplified negative resist optimized for high-resolution x-ray lithography
Author(s): Jiro Nakamura; Yoshio Kawai; Kimiyoshi Deguchi; Masatoshi Oda; Tadahito Matsuda
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Paper Abstract

We have developed a three-component negative resist for x- ray lithography which is composed of monodispersed polyhydroxystyrene as a base polymer, hexamethoxymethylmelamine as a cross-linker, and alicyclic- bromides containing ketonic groups as an acid generator. To enlarge the contrast of the dissolution rate between the exposed and unexposed films, polyhydroxystyrene was partially protected by t-butoxycarbonyl groups and organic bases were added to the resist component. Among the bromic compounds we evaluated as acid generators, the alicyclic- bromides containing ketonic groups produced hydrobromic acids most efficiently. The resolution of the new resist remains nice down to 80-nm line-and-space patterns at a proximity gap of 20 micrometers , and 70-nm patterns at a gap of 10 micrometers with a resist sensitivity of 150 mJ/cm2.

Paper Details

Date Published: 11 June 1999
PDF: 8 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350228
Show Author Affiliations
Jiro Nakamura, NTT System Electronics Labs. (Japan)
Yoshio Kawai, NTT System Electronics Labs. (Japan)
Kimiyoshi Deguchi, NTT System Electronics Labs. (Japan)
Masatoshi Oda, NTT System Electronics Labs. (Japan)
Tadahito Matsuda, NTT System Electronics Labs. (Japan)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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