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Proceedings Paper

Progress of a CVD-based photoresist 193-nm lithography process
Author(s): Carol Y. Lee; Dian Sugiarto; Ling Liao; David Mui; Timothy W. Weidman; Michael P. Nault; Tony Tryba
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Paper Abstract

Plasma polymerized organosilane resists films have been shown to exhibit high sensitivity to DUV radiation. We have previously demonstrated a 193nm CVD photoresist process in which plasma polymerized methylsilane (PPMS) is patterned via photo-oxidation, dry-developed, converted into silicon dioxide, and then transferred into an underlying Si layer with high selectivity. The PPMS resist exhibits linearity down to a resolution of 130 nm L/S for a 1:1 pitch. We have demonstrated 100 nm Iso-lines at 28 mJ/cm2 dose with 11 percent dose latitude and 600 nm focus latitude. Depths of focus greater than 500 nm have been demonstrated for 160 nm nested L/S.

Paper Details

Date Published: 11 June 1999
PDF: 13 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350216
Show Author Affiliations
Carol Y. Lee, Intel Corp. (United States)
Dian Sugiarto, Applied Materials, Inc. (United States)
Ling Liao, Intel Corp. (United States)
David Mui, Applied Materials, Inc. (United States)
Timothy W. Weidman, Applied Materials, Inc. (United States)
Michael P. Nault, Applied Materials, Inc. (United States)
Tony Tryba, Applied Materials, Inc. (United States)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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