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Proceedings Paper

Outlook for 157-nm resist design
Author(s): Roderick R. Kunz; Theodore M. Bloomstein; D. E. Hardy; Russell B. Goodman; Deanna K. Downs; Jane E. Curtin
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Paper Abstract

We have measured the transparencies of a number of a candidate resist materials for 157 nm, with an emphasis on determining which chemical platforms would allow resist to be used at maximum thicknesses while meeting requirements for optical density. Assuming an ideal resist optical density of 0.4, our findings show that all existing commercially available resists would need to be < 90 nm thick, whereas specialized hydrocarbon resists could be made approximately 120 nm thick, and new resists based on hydrofluorocarbons, siloxanes, and/or silsesquioxanes could be engineered to be used in thicknesses approaching 200 nm. We also assess the tradeoff between these thicknesses and what current information exists regarding defects as a function of resist thickness.

Paper Details

Date Published: 11 June 1999
PDF: 11 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350200
Show Author Affiliations
Roderick R. Kunz, MIT Lincoln Lab. (United States)
Theodore M. Bloomstein, MIT Lincoln Lab. (United States)
D. E. Hardy, MIT Lincoln Lab. (United States)
Russell B. Goodman, MIT Lincoln Lab. (United States)
Deanna K. Downs, MIT Lincoln Lab. (United States)
Jane E. Curtin, MIT Lincoln Lab. (United States)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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