The development and refinement of 193 nm single layer photoresist has continued to progress at a quick pace. Published resists efforts have historically been partitioned by polymer family: acrylic, addition cyclic olefin, and alternating cyclic olefin/maleic anhydride. The polymer platforms for 193 nm resists have been a radical departure from 248 nm resists, therefore, publications to date have largely focused on the attributes of each specific variety. Since the physical and chemical properties of the aforementioned polymer platforms are very different, it would follow that, in principal, typical formulation strategies should produce varying results in each platform. This paper investigates the effects of three typical photoacid generators and three model polymers on various aspects of lithographic evaluation.

Date Published: 11 June 1999
PDF: 10 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350161

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)