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Proceedings Paper

SiON-based antireflective coating for 193-nm lithography
Author(s): Patrick Schiavone; C. Esclope; A. Halimaoui
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Paper Abstract

Silicon oxynitride has been shown to be an efficient antireflective materials at 365 and 248 nm. In this paper, we confirm that SiON can be used successfully at 193nm. SiON is deposited at low substrate temperature in a Plasma Enhanced Chemical Vapor Deposition reactor using silane and nitrous oxide as precursor gases. Compatibility of the silicon oxynitride underlayer with sensitive chemically amplified resist is examined. A simple surface treatment is shown to give very good results and almost completely suppresses any contamination of the chemically amplified resist.

Paper Details

Date Published: 11 June 1999
PDF: 5 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999);
Show Author Affiliations
Patrick Schiavone, France Telecom CNET-CNS (France)
C. Esclope, France Telecom CNET-CNS (France)
A. Halimaoui, France Telecom CNET-CNS (France)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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