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Proceedings Paper

Advanced metal lift-off process using electron-beam flood exposure of single-layer photoresist
Author(s): Jason P. Minter; Matthew F. Ross; William R. Livesay; Selmer S. Wong; Mark E. Narcy; Trey Marlowe
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Paper Abstract

In the manufacture of many types of integrated circuit and thin film devices, it is desirable to use a lift-of process for the metallization step to avoid manufacturing problems encountered when creating metal interconnect structures using plasma etch. These problems include both metal adhesion and plasma etch difficulties. Key to the success of the lift-off process is the creation of a retrograde or undercut profile in the photoresists before the metal deposition step. Until now, lift-off processing has relied on costly multi-layer photoresists schemes, image reversal, and non-repeatable photoresist processes to obtain the desired lift-off profiles in patterned photoresist. This paper present a simple, repeatable process for creating robust, user-defined lift-off profiles in single layer photoresist using a non-thermal electron beam flood exposure. For this investigation, lift-off profiles created using electron beam flood exposure of many popular photoresists were evaluated. Results of lift-off profiles created in positive tone AZ7209 and ip3250 are presented here.

Paper Details

Date Published: 11 June 1999
PDF: 9 pages
Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); doi: 10.1117/12.350158
Show Author Affiliations
Jason P. Minter, AlliedSignal Inc. (United States)
Matthew F. Ross, AlliedSignal Inc. (United States)
William R. Livesay, AlliedSignal Inc. (United States)
Selmer S. Wong, AlliedSignal Inc. (United States)
Mark E. Narcy, AlliedSignal Inc. (United States)
Trey Marlowe, AlliedSignal Inc. (United States)

Published in SPIE Proceedings Vol. 3678:
Advances in Resist Technology and Processing XVI
Will Conley, Editor(s)

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