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Proceedings Paper

Schroedinger's wave function and related device characteristics in MODFET under illumination
Author(s): P. K. Singh; B. B. Pal
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Paper Abstract

The effect of illumination on the Schrodinger's wave function and related device characteristics has been studied in the quantum well of a n-AlGaAs/GaAs MODFET. Partial depletion of the active region of the MODFET has been considered. At the heterojunction interface, the quantum well has been considered as a modified triangular potential well of finite depth. The potential energy and the subband energy are calculated by solving the Poisson's equation. The wave function, sheet concentration and the I-V characteristics of the MODFET under dark and illuminated conditions have been calculated and discussed.

Paper Details

Date Published: 28 April 1999
PDF: 8 pages
Proc. SPIE 3666, International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '98, (28 April 1999);
Show Author Affiliations
P. K. Singh, Banaras Hindu Univ. (India)
B. B. Pal, Banaras Hindu Univ. (India)


Published in SPIE Proceedings Vol. 3666:
International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '98
Anurag Sharma; Banshi Dhar Gupta; Ajoy K. Ghatak, Editor(s)

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