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Proceedings Paper

Resistive YBaCuO microbolometers for infrared imaging applications
Author(s): Linh Phong Ngo; S. N. Qiu; Bruno Tremblay
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Paper Abstract

Details of the fabrication process and figures of merit of resistive YBaCuO micro bolometers are reported. Thin films of YBaCuO were prepared on Si wafers under conditions that promote formation of the semi-conducting phase at room temperatures. Effects of the preparation conditions on activation energy of YBaCuO were studied to obtain films with a large temperature coefficient of resistance (TCR). TCR with values of up to 0.04 K-1 was achieved uniformly on 10- cm wide wafer areas. Bulk micromachining was used to create 60 X 60 micrometer2 bolometers on Si3N4 bridges with a thermal conductance of approximately 7.6 X 10-7 W/K. The low frequency responsivity and detectivity of the micro bolometers were respectively approximately 7 X 104 V/W and 3 X 109 cm.Hz1/2/W at room temperatures. These figures compare favorably with figures of other classes of un-cooled micro bolometer and are consistent with those derived from thermal properties of the bridge. Under normal operating conditions and assuming f/1.0 optics, the NETD of focal planes that make use of these micro bolometers was estimated to be less than 50 mK in the spectral range of 8 to 14 micrometer.

Paper Details

Date Published: 7 May 1999
PDF: 4 pages
Proc. SPIE 3740, Optical Engineering for Sensing and Nanotechnology (ICOSN '99), (7 May 1999); doi: 10.1117/12.347719
Show Author Affiliations
Linh Phong Ngo, Defence Research Establishment Valcartier (Canada)
S. N. Qiu, Defence Research Establishment Valcartier (Canada)
Bruno Tremblay, Defence Research Establishment Valcartier (Canada)

Published in SPIE Proceedings Vol. 3740:
Optical Engineering for Sensing and Nanotechnology (ICOSN '99)
Ichirou Yamaguchi, Editor(s)

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