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Proceedings Paper

Actively mode-locked THz p-Ge hot-hole lasers with electric pulse-separation control and gain control
Author(s): Remco C. Strijbos; Andrei V. Muravjov; S. H. Withers; Sergei G. Pavlov; Valery N. Shastin; Robert E. Peale
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Paper Abstract

Electric control of the separation between two interleaved pulse trains from a far-IR p-Ge laser, which is actively mode-locked by rf gain modulation at the second harmonic of the roundtrip frequency, is demonstrated by changing the electric bias at the rf contacts. A suggested application is telemetry using pulse-separation modulation. Optimal operation of the laser on the light-to-heavy-hole transition requires strong, perfectly crossed electric and magnetic fields, but the experimental data reveal a electric-field component along the magnetic field caused by space-charge effects inside the laser crystal, even when the applied fields are perfectly orthogonal. Monte Carlo simulations together with a Poisson solver are used to discuss the various mechanisms behind these effects and to find the electric field inside the laser crystal. These calculations agree reasonably well with experimental data obtained so far, and show not only the significant impact that charging can have on the output of actively mode-locked p-Ge lasers, but also suggest that they strongly influence the average gain of p-Ge lasers in general.

Paper Details

Date Published: 29 April 1999
PDF: 11 pages
Proc. SPIE 3617, Terahertz Spectroscopy and Applications, (29 April 1999); doi: 10.1117/12.347123
Show Author Affiliations
Remco C. Strijbos, CREOL/Univ. of Central Florida (Netherlands)
Andrei V. Muravjov, CREOL/Univ. of Central Florida (United States)
S. H. Withers, CREOL/Univ. of Central Florida (United States)
Sergei G. Pavlov, Institute for Physics of Microstructures (Russia)
Valery N. Shastin, Institute for Physics of Microstructures (Russia)
Robert E. Peale, CREOL/Univ. of Central Florida (United States)

Published in SPIE Proceedings Vol. 3617:
Terahertz Spectroscopy and Applications
Mark S. Sherwin, Editor(s)

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