In this paper, we demonstrate the way in which techniques available on a scanning transmission electron microscope (STEM), particularly Z-contrast imaging and energy- dispersive x-ray microanalysis, can be applied successfully in the characterization and failure analysis of super-micron semiconductor manufacturing technologies. Following a general description of the techniques, two separate examples are given: Firstly, the detailed characterization of a low temperature coefficient of resistance SiCCr thin film where a complex microstructure covering a total thickness of approximately 100 angstrom is revealed and described. Secondly, we describe the way in which STEM was used to detect and observe nanometer-sized PtSi spiking in doped epilayers - the root cause of an NMOS sub-threshold leakage issue.

Date Published: 27 April 1999
PDF: 8 pages
Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); doi: 10.1117/12.346917

Published in SPIE Proceedings Vol. 3743:
In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing
Kostas Amberiadis; Gudrun Kissinger; Katsuya Okumura; Seshu Pabbisetty; Larg H. Weiland, Editor(s)