
Proceedings Paper
Use and function of TXRF (total reflection x-ray fluorescence) for routine in fab metallic monitoringFormat | Member Price | Non-Member Price |
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Paper Abstract
As the geometries of semiconductors shrink the sensitivity to metal contamination becomes more apparent. This makes the ability to detect a broad range of metals at levels form 108 to 109 at/cm2 very important. The advent of Copper processing in many cleanrooms also raises the concern of cross-contamination and highlights the need for a fast, sensitive, and easy to use detection tool. The use of a TXRF machine in the silicon wafer fabrication area provides the ability to measure metals at levels ranging from 5E11 to 1E9 at/cm2 without multiple processing steps.
Paper Details
Date Published: 27 April 1999
PDF: 5 pages
Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); doi: 10.1117/12.346909
Published in SPIE Proceedings Vol. 3743:
In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing
Kostas Amberiadis; Gudrun Kissinger; Katsuya Okumura; Seshu Pabbisetty; Larg H. Weiland, Editor(s)
PDF: 5 pages
Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); doi: 10.1117/12.346909
Show Author Affiliations
Mike Allen, Advanced Micro Devices, Inc. (United States)
Tim Z. Hossain, Advanced Micro Devices, Inc. (United States)
Tim Z. Hossain, Advanced Micro Devices, Inc. (United States)
Joseph Lebowitz, Advanced Micro Devices, Inc. (United States)
Published in SPIE Proceedings Vol. 3743:
In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing
Kostas Amberiadis; Gudrun Kissinger; Katsuya Okumura; Seshu Pabbisetty; Larg H. Weiland, Editor(s)
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