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Proceedings Paper

Effect of reticle manufacturing quality on full chip optical proximity correction
Author(s): Brian Martin; Graham G. Arthur
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Paper Abstract

Critical Dimensions (CD) are measured on reticles which are written incorporating an optical proximity correction for pitch dependent linewidth bias. Reticles are manufactured on different generations of laser write tools and the result in terms of mean ann range of dimensions compared. Lithography simulation is used to test the response of reticle CD variation at wafer level.

Paper Details

Date Published: 28 April 1999
PDF: 5 pages
Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); doi: 10.1117/12.346894
Show Author Affiliations
Brian Martin, Mitel Semiconductor (United Kingdom)
Graham G. Arthur, Rutherford Appleton Lab. (United Kingdom)

Published in SPIE Proceedings Vol. 3741:
Lithography for Semiconductor Manufacturing
Chris A. Mack; Tom Stevenson, Editor(s)

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