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Proceedings Paper

Deep-ultraviolet lithography simulator tuning by resist profile matching
Author(s): Xinhui Niu; Nickhil H. Jakatdar; Costas J. Spanos
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Paper Abstract

TCAD simulation is very important for DUV lithography process development and control. Traditional lithography process engineering has relied on short-loop and pilot-lot experiments to understand the effects of particular process control factors. However, experiments are very expensive, and the complexity of lithographic patterns and processes is such that we must often resort to computational simulation. The availability, accuracy, and ease of use of lithography simulation are essential to the semiconductor industry. In this paper we present a methodology for DUV lithography simulator tuning by resists profile matching. A global optimization procedure is used to efficiently extract the correct values of the important fitting parameters by matching the simulated resist profiles to measured data. Results for a DUV lithography process are presented.

Paper Details

Date Published: 28 April 1999
PDF: 8 pages
Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); doi: 10.1117/12.346889
Show Author Affiliations
Xinhui Niu, Timbre Technology, Inc. and Univ. of California/Berkeley (United States)
Nickhil H. Jakatdar, Univ. of California/Berkeley (United States)
Costas J. Spanos, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 3741:
Lithography for Semiconductor Manufacturing
Chris A. Mack; Tom Stevenson, Editor(s)

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